pp. 415-428
S&M501 Research Paper Published: 2002 Temperature Dependent Etching of (100) and (110) Silicon in NaOH and in Tetramethyl-Ammonium Hydroxide [PDF] Vladimir F. Kleptsyn and Johannes G. Smits Keywords: silicon, wet etching, sodium hydroxide, tetramethyl ammonium hydroxide
The etch rates for single crystal silicon wafers in NaOH and tetramethyl-ammonium hydroxide (TMAH) have been measured in the temperature range from 28℃ to 80℃ and activation energies of about 0.68 and 0.57 eV for NaOH and TMAH respectively for the (100) plane are observed. A qualitative model of the etching of silicon planes in NaOH and TMAH is presented.
![]() Cite this article Vladimir F. Kleptsyn and Johannes G. Smits, Temperature Dependent Etching of (100) and (110) Silicon in NaOH and in Tetramethyl-Ammonium Hydroxide, Sens. Mater., Vol. 14, No. 8, 2002, p. 415-428. |