pp. 415-428
S&M501 Research Paper Published: 2002 Temperature Dependent Etching of (100) and (110) Silicon in NaOH and in Tetramethyl-Ammonium Hydroxide [PDF] Vladimir F. Kleptsyn and Johannes G. Smits Keywords: silicon, wet etching, sodium hydroxide, tetramethyl ammonium hydroxide
The etch rates for single crystal silicon wafers in NaOH and tetramethyl-ammonium hydroxide (TMAH) have been measured in the temperature range from 28℃ to 80℃ and activation energies of about 0.68 and 0.57 eV for NaOH and TMAH respectively for the (100) plane are observed. A qualitative model of the etching of silicon planes in NaOH and TMAH is presented.
Cite this article Vladimir F. Kleptsyn and Johannes G. Smits, Temperature Dependent Etching of (100) and (110) Silicon in NaOH and in Tetramethyl-Ammonium Hydroxide, Sens. Mater., Vol. 14, No. 8, 2002, p. 415-428. |