pp. 161-169
S&M640 Research Paper of Special Issue Published: 2006 Fabrication of Ultrasonic Transducers Using Epitaxial Pb(Zr,Ti)O3 Thin Films on Epitaxial γ-Al2O3/Si Substrates for Smart Sensors [PDF] Daisuke Akai, Yasuhiro Oba, Nagaya Okada, Mikinori Ito, Kazuaki Sawada, Hidekuni Takao and Makoto Ishida (Received February 27, 2006; Accepted April 3, 2006) Keywords: Pb(Zr,Ti)O3, Al2O3, ultrasonic transducer on Si, piezoelectric
Ultrasonic transducers using epitaxial Pb(Zr,Ti)O3 (PZT) thin films on epitaxial γ- Al2O3/Si substrates were successfully fabricated for the first time. The characteristics of PZT thin films on the γ-Al2O3/Si substrates were investigated. 240-nm-thick PZT films with various compositions were formed by the conventional sol-gel method. All PZT films were epitaxially grown on the substrates and exhibited ferroelectric and piezoelectric characteristics. Ultrasonic transducers were fabricated on the epitaxial γ-Al2O3(001)/ Si(001) substrates with transducer element of 1 mm square. The transmission and reception characteristics of the ultrasonic transducers were observed in water by a hydorophone. Fabricated transducers can transmit and receive an ultrasonic wave with frequency of 2.5 MHz at distances of 15 and 20 mm. From these results, ultrasonic transducers with the epitaxial PZT/Pt/γ-Al2O3/Si structure can be applied to Si monolithic ultrasonic smart sensors.
Corresponding author: Daisuke Akai and Makoto Ishida![]() Cite this article Daisuke Akai, Yasuhiro Oba, Nagaya Okada, Mikinori Ito, Kazuaki Sawada, Hidekuni Takao and Makoto Ishida, Fabrication of Ultrasonic Transducers Using Epitaxial Pb(Zr,Ti)O3 Thin Films on Epitaxial γ-Al2O3/Si Substrates for Smart Sensors, Sens. Mater., Vol. 18, No. 3, 2006, p. 161-169. |