pp. 161-169
S&M640 Research Paper of Special Issue Published: 2006 Fabrication of Ultrasonic Transducers Using Epitaxial Pb(Zr,Ti)O3 Thin Films on Epitaxial γ-Al2O3/Si Substrates for Smart Sensors [PDF] Daisuke Akai, Yasuhiro Oba, Nagaya Okada, Mikinori Ito, Kazuaki Sawada, Hidekuni Takao and Makoto Ishida (Received February 27, 2006; Accepted April 3, 2006) Keywords: Pb(Zr,Ti)O3, Al2O3, ultrasonic transducer on Si, piezoelectric
Ultrasonic transducers using epitaxial Pb(Zr,Ti)O3 (PZT) thin films on epitaxial γ- Al2O3/Si substrates were successfully fabricated for the first time. The characteristics of PZT thin films on the γ-Al2O3/Si substrates were investigated. 240-nm-thick PZT films with various compositions were formed by the conventional sol-gel method. All PZT films were epitaxially grown on the substrates and exhibited ferroelectric and piezoelectric characteristics. Ultrasonic transducers were fabricated on the epitaxial γ-Al2O3(001)/ Si(001) substrates with transducer element of 1 mm square. The transmission and reception characteristics of the ultrasonic transducers were observed in water by a hydorophone. Fabricated transducers can transmit and receive an ultrasonic wave with frequency of 2.5 MHz at distances of 15 and 20 mm. From these results, ultrasonic transducers with the epitaxial PZT/Pt/γ-Al2O3/Si structure can be applied to Si monolithic ultrasonic smart sensors.
Corresponding author: Daisuke Akai and Makoto IshidaCite this article Daisuke Akai, Yasuhiro Oba, Nagaya Okada, Mikinori Ito, Kazuaki Sawada, Hidekuni Takao and Makoto Ishida, Fabrication of Ultrasonic Transducers Using Epitaxial Pb(Zr,Ti)O3 Thin Films on Epitaxial γ-Al2O3/Si Substrates for Smart Sensors, Sens. Mater., Vol. 18, No. 3, 2006, p. 161-169. |