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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 27, Number 1 (2015)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 135-142
S&M1054 Research Paper of Special Issue https://doi.org/10.18494/SAM.2015.1079 Published: January 29, 2015 Highly Sensitive Gate/Body-Tied Metal-Oxide-Semiconductor Field-Effect Transistor-Type Photodetector with Wavelength-Selective Metal Grid Structure Using Standard Complementary Metal-Oxide-Semiconductor Technology [PDF] Hee Ho Lee, Sung-Hyun Jo, Myunghan Bae, Byung-Soo Choi, Jeongyeob Kim, Hong-Kun Lyu and Jang-Kyoo Shin (Received July 18, 2014; Accepted December 8, 2014) Keywords: gate/body-tied MOSFET-type photodetector, metal grid, wavelength selectivity, high sensitivity
In this research, a highly sensitive gate/body-tied metal-oxide-semiconductor field-effect transistor (MOSFET)-type photodetector with a wavelength-selective metal grid structure was designed and fabricated using 0.18-µm standard complementary metal-oxide-semiconductor technology. This device is composed of a floating gate that is tied to a well and a wavelength-selective metal grid is placed on top of each photodetector. The designed metal grid structure included one-dimensional and two-dimensional patterned metal layers. The amplified photocurrent of the gate/body-tied MOSFET-type photodetector was found to be more than 1000-fold that of a conventional n+/p-sub photodiode with the same area. To demonstrate the wavelength selectivity, we measured the drain current and transmittance of the photodetector as a function of wavelength.
Corresponding author: Jang-Kyoo Shin Cite this article Hee Ho Lee, Sung-Hyun Jo, Myunghan Bae, Byung-Soo Choi, Jeongyeob Kim, Hong-Kun Lyu and Jang-Kyoo Shin, Highly Sensitive Gate/Body-Tied Metal-Oxide-Semiconductor Field-Effect Transistor-Type Photodetector with Wavelength-Selective Metal Grid Structure Using Standard Complementary Metal-Oxide-Semiconductor Technology, Sens. Mater., Vol. 27, No. 1, 2015, p. 135-142. |
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