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Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials, Volume 27, Number 1 (2015)
Copyright(C) MYU K.K.
pp. 135-142
S&M1054 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2015.1079
Published: January 29, 2015

Highly Sensitive Gate/Body-Tied Metal-Oxide-Semiconductor Field-Effect Transistor-Type Photodetector with Wavelength-Selective Metal Grid Structure Using Standard Complementary Metal-Oxide-Semiconductor Technology [PDF]

Hee Ho Lee, Sung-Hyun Jo, Myunghan Bae, Byung-Soo Choi, Jeongyeob Kim, Hong-Kun Lyu and Jang-Kyoo Shin

(Received July 18, 2014; Accepted December 8, 2014)

Keywords: gate/body-tied MOSFET-type photodetector, metal grid, wavelength selectivity, high sensitivity

In this research, a highly sensitive gate/body-tied metal-oxide-semiconductor field-effect transistor (MOSFET)-type photodetector with a wavelength-selective metal grid structure was designed and fabricated using 0.18-µm standard complementary metal-oxide-semiconductor technology. This device is composed of a floating gate that is tied to a well and a wavelength-selective metal grid is placed on top of each photodetector. The designed metal grid structure included one-dimensional and two-dimensional patterned metal layers. The amplified photocurrent of the gate/body-tied MOSFET-type photodetector was found to be more than 1000-fold that of a conventional n+/p-sub photodiode with the same area. To demonstrate the wavelength selectivity, we measured the drain current and transmittance of the photodetector as a function of wavelength.

Corresponding author: Jang-Kyoo Shin


Cite this article
Hee Ho Lee, Sung-Hyun Jo, Myunghan Bae, Byung-Soo Choi, Jeongyeob Kim, Hong-Kun Lyu and Jang-Kyoo Shin, Highly Sensitive Gate/Body-Tied Metal-Oxide-Semiconductor Field-Effect Transistor-Type Photodetector with Wavelength-Selective Metal Grid Structure Using Standard Complementary Metal-Oxide-Semiconductor Technology, Sens. Mater., Vol. 27, No. 1, 2015, p. 135-142.



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