pp. 575-583
S&M1092 Research Paper https://doi.org/10.18494/SAM.2015.1185 Published: August 11, 2015 Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes [PDF] Hee Ho Lee, Myunghan Bae, Sung-Hyun Jo, Jang-Kyoo Shin, Dong Hyeok Son, Chul-Ho Won and Jung-Hee Lee (Received March 23, 2015; Accepted June 15, 2015) Keywords: AlGaN/GaN, HFET, biosensor, extended-gate structure, streptavidin-biotin complexes
In this study, we fabricated an AlGaN/GaN-based heterostructure field-effect transistor (HFET)-type biosensor with an extended-gate structure for detecting streptavidin-biotin complexes. The gate voltage of the fabricated device was applied using a commercial Ag/AgCl reference electrode. The binding of a self-assembled monolayer (SAM), streptavidin and biotin was detected by measuring the electrical characteristics of the fabricated biosensor. X-ray photoelectron spectroscopy (XPS) was used to verify the immobilization of the SAM on the Au-coated GaN surface. The proposed biosensor shows that biotin can be detected for a wide range of concentrations from 0.1 to 1000 ng/ml. The long-term stability of both the extended-gate AlGaN/GaN-based HFET-type and conventional AlGaN/GaN-based HFET-type biosensors was measured in phosphate-buffered saline (PBS) solution. A high sensitivity and excellent stability of the proposed biosensor has been experimentally verified.
Corresponding author: Jang-Kyoo ShinCite this article Hee Ho Lee, Myunghan Bae, Sung-Hyun Jo, Jang-Kyoo Shin, Dong Hyeok Son, Chul-Ho Won and Jung-Hee Lee, Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes, Sens. Mater., Vol. 27, No. 7, 2015, p. 575-583. |