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Vol. 34, No. 8(3), S&M3042

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Vol. 32, No. 8(2), S&M2292

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Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
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Sensors and Materials, Volume 27, Number 11 (2015)
Copyright(C) MYU K.K.
pp. 1059-1070
S&M1143 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2015.1193
Published: December 9, 2015

Design, Analysis, and System-Level Simulation of a Micromachined Resonant Charge Sensor with Microleverage Mechanisms [PDF]

Jiuxuan Zhao, Hong Ding, Wen Wang and Jin Xie

(Received March 30, 2015; Accepted June 23, 2015)

Keywords: resonant charge sensor, micro-electromechanical systems, microlevers, sensitivity enhancement

In this paper, a micromechanical electrostatic resonant charge sensor with responsivity enhanced by introducing dual single-stage microleverage mechanisms (microlevers) is presented. The sensor is based on the mechanism of detecting the resonant frequency shift of a single-crystal silicon double-ended tuning fork (DETF) element due to the axial compression generated by the additional charge and transformed by the microlevers. An analytic model comprising both mechanical and electrical subsystems was derived. The system-level simulation was carried out to optimize the critical dimensions and responsivity that coincides with the theoretical solution. The resonator has a nominal resonant frequency of 166 kHz and the amplification factor is more than 8. Simulation results suggest that the responsivity of the charge sensor is 1.38 × 10−3 Hz/fC2. Finally, the device was fabricated in a commercial standard silicon-on-insulator (SOI) micromachining process to reduce the parasitic capacitance more effectively by back-side release.

Corresponding author: Jin Xie


Cite this article
Jiuxuan Zhao, Hong Ding, Wen Wang and Jin Xie, Design, Analysis, and System-Level Simulation of a Micromachined Resonant Charge Sensor with Microleverage Mechanisms, Sens. Mater., Vol. 27, No. 11, 2015, p. 1059-1070.



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