The nitrogen-implanted titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon (hereafter, N-TOHOS) device can be a candidate for total ionizing dose (TID) radiation sensor application. In this study, we mainly focus on N implantation for the improvement of the TID radiation-induced charging effect performance of the N-TOHOS device. The TID radiation-induced charging effect performance of the N-TOHOS device is improved by the implantation of nitrogen in the HfO2 trapping layer. Experimental data show that the radiation-induced charge density of a typical N-TOHOS device is approximately 4–5 times that of a conventional metal–oxide–nitride–oxide–silicon (MONOS) device reported previously. The charge retention reliability after 5 mrad gamma irradiation of the N-TOHOS device with a high implantation dose and a low implantation energy can be improved. The N-TOHOS device described in this study has demonstrated its potential for nonvolatile TID radiation sensing application in the future.