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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 30, Number 1 (2018)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 129-134
S&M1479 Research Paper https://doi.org/10.18494/SAM.2018.1643 Published: January 12, 2018 Complementary Metal Oxide Semiconductor Image Sensor Using Gate/Body-tied P-channel Metal Oxide Semiconductor Field Effect Transistor-type Photodetector for High-speed Binary Operation [PDF] Byoung-Soo Choi, Sang-Hwan Kim, Jimin Lee, Chang-Woo Oh, Sang-Ho Seo, and Jang-Kyoo Shin (Received June 1, 2017; Accepted August 22, 2017) Keywords: CMOS, image sensor, binary operation, gate/body-tied PMOSFET, photodetector
In this paper, we propose a CMOS image sensor that uses a gate/body-tied p-chnnel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector for highspeed binary operation. The sensitivity of the gate/body-tied PMOSFET-type photodetector is approximately six times that of the p–n junction photodetector for the same area. Thus, an active pixel sensor with a highly sensitive gate/body-tied PMOSFET-type photodetector is more appropriate for high-speed binary operation. Moreover, the CMOS image sensor for binary operation has the advantages of low power consumption and a simple circuit because an analogto- digital converter is not necessary. The proposed image sensor was fabricated and measured using a CMOS 0.35 µm conventional process.
Corresponding author: Jang-Kyoo Shin Cite this article Byoung-Soo Choi, Sang-Hwan Kim, Jimin Lee, Chang-Woo Oh, Sang-Ho Seo, and Jang-Kyoo Shin, Complementary Metal Oxide Semiconductor Image Sensor Using Gate/Body-tied P-channel Metal Oxide Semiconductor Field Effect Transistor-type Photodetector for High-speed Binary Operation, Sens. Mater., Vol. 30, No. 1, 2018, p. 129-134. |
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