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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 30, Number 4(2) (2018)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 933-938
S&M1551 Research Paper of Special Issue https://doi.org/10.18494/SAM.2018.1796 Published: April 27, 2018 Bipolar Switching Properties of Bilayer V2O5/Sm2O3 Thin-film Resistive Random Access Memory Device Prepared by Sputtering Technology [PDF] Jian-Yang Lin, Kuang-Yao Wu, Kai-Huang Chen, Chien-Min Cheng, and Cheng-Ying Li (Received November 1, 2017; Accepted March 7, 2018) Keywords: resistive random access memory (RRAM), bipolar switching characteristic, postannealing, forming voltage
In this study, V2O5 and Sm2O3 thin films have been successfully fabricated for application in resistive random access memory (RRAM). The RRAMs with V2O5 and Sm2O3 films have shown bipolar switching characteristics. Introducing a suitable oxygen concentration in the V2O5 film can improve the switching performance. Postannealing of the V2O5/Sm2O3/TiN/SiO2/Si device can decrease the forming voltage to 1.1 V.
Corresponding author: Jian-Yang Lin Cite this article Jian-Yang Lin, Kuang-Yao Wu, Kai-Huang Chen, Chien-Min Cheng, and Cheng-Ying Li, Bipolar Switching Properties of Bilayer V2O5/Sm2O3 Thin-film Resistive Random Access Memory Device Prepared by Sputtering Technology, Sens. Mater., Vol. 30, No. 4, 2018, p. 933-938. |
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