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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 30, Number 7(2) (2018)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 1605-1610
S&M1617 Research Paper of Special Issue https://doi.org/10.18494/SAM.2018.1929 Published: July 27, 2018 Carrier Transport Properties of CdTe Detector under Polarization Condition [PDF] Hisaya Nakagawa, Tsuyoshi Terao, Tomoaki Masuzawa, Tetsu Ito, Akifumi Koike, Hisashi Morii, and Toru Aoki (Received February 1, 2018; Accepted April 25, 2018) Keywords: radiation detector, semiconductor detector, CdTe, polarization, carrier transport properties
Cadmium telluride (CdTe) is a promising material for semiconductor-based roomtemperature radiation detectors because of its wide bandgap and relatively good carrier transport properties. One remaining issue of CdTe detectors is an instability arising in longterm operation. This instability, called polarization, is explained by charge accumulation due to carrier trapping/detrapping at deep defect levels. However, previous explanations did not include carrier transport in CdTe. In this study, we have investigated carrier transport properties by measuring the carrier transit time at each stage of polarization. As a result, we have developed a polarization model including carrier transport and calculated the electric field distribution across the CdTe detector during polarization.
Corresponding author: Hisaya Nakagawa Cite this article Hisaya Nakagawa, Tsuyoshi Terao, Tomoaki Masuzawa, Tetsu Ito, Akifumi Koike, Hisashi Morii, and Toru Aoki, Carrier Transport Properties of CdTe Detector under Polarization Condition, Sens. Mater., Vol. 30, No. 7, 2018, p. 1605-1610. |
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