In this study, transparent thin films of ZnO/Ag/ZnO were deposited on Corning glass substrates by radio-frequency (RF) magnetron sputtering, and the effect of different annealing temperatures on the transmittance, electrical, and crystalline properties of the grown films was investigated. The results showed that the multilayered films exhibited a transmittance of approximately 80% at an annealing temperature of 300 ℃. The resistivity (3.95 × 10−5 Ω-cm) was also the lowest at 450 ℃, the mobility was 14.7 cm2/V-s, and the carrier concentration was 5.75 × 1021 cm−3. The experiments showed that as the annealing temperature was raised, the transmittance increased up to 450 ℃. After this, the transmittance decreased. However, resistivity continued to drop with further increase in temperature, accompanied by an increase in crystal grain size.