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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 31, Number 6(2) (2019)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 1939-1955
S&M1909 Review paper https://doi.org/10.18494/SAM.2019.2313 Published: June 18, 2019 A Review of Proximity Gettering Technology for CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation [PDF] Kazunari Kurita, Takeshi Kadono, Ryousuke Okuyama, Satoshi Shigematsu, Ryo Hirose, Ayumi Onaka-Masada, Yoshihiro Koga, and Hidehiko Okuda (Received January 28, 2019; Accepted April 15, 2019) Keywords: CMOS image sensors, gettering technique, metallic impurity, hydrocarbon molecular ion implantation, white spot defects, dark current, image lag, dark current spectroscopy
We developed a high-gettering-capability silicon wafer for advanced CMOS image sensors using hydrocarbon molecular ion implantation. We found that this novel silicon wafer has an extremely high gettering capability for metal, oxygen, and hydrogen impurities during the CMOS device fabrication process. We also found that the white spot defect density of a hydrocarbon-molecular-ion-implanted CMOS image sensor was substantially lower than that of a CMOS image sensor without hydrocarbon molecular ion implantation. This indicates that the novel silicon wafer helped improve device performance parameters such as white spot defect density and dark current. We believe that this wafer will be beneficial in the design of silicon wafers for advanced CMOS image sensor fabrication.
Corresponding author: Kazunari Kurita  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Kazunari Kurita, Takeshi Kadono, Ryousuke Okuyama, Satoshi Shigematsu, Ryo Hirose, Ayumi Onaka-Masada, Yoshihiro Koga, and Hidehiko Okuda, A Review of Proximity Gettering Technology for CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation, Sens. Mater., Vol. 31, No. 6, 2019, p. 1939-1955. |
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