Sensors and Materials

Young Researcher Paper Award 2025
🥇Winners

Notice of retraction
Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.

Tweets by Journal_SandM Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.

Instructions to authors
English 日本語

Instructions for manuscript preparation
English 日本語

Template
English

Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547

MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.

MYU Research
(proofreading and recording)

MYU K.K.
(translation service)

The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)

Sensors and Materials, Volume 32, Number 8(1) (2020)
Copyright(C) MYU K.K.

pp. 2607-2614
S&M2287 Research Paper of Special Issue (Dr. Niitsu)
https://doi.org/10.18494/SAM.2020.2496
Published: August 10, 2020

Design and Verification of Stochastic Oscillator Using Multiple Ring Oscillators and OR-gate for Low-voltage Operation in 65 nm CMOS [PDF]

Shunya Murakami, Kenya Hayashi, Shigeki Arata, Ge Xu, Cong Dang Bui, Atsuki Kobayashi, and Kiichi Niitsu

(Received June 29, 2019; Accepted June 5, 2020)

Keywords: low-voltage operation, low power, CMOS, ring oscillator

In this paper, we present a stochastic oscillator comprising multiple ring oscillators and an OR-gate intended for low-supply-voltage operation for the first time. To achieve low-supply-voltage operation under a wide range of process variations, multiple ring oscillators are employed. By using an OR-gate, the ring oscillator with the lowest voltage can be utilized, which was confirmed by SPICE simulations. The prototype is fabricated using 65 nm CMOS technology. Measurement results show the effectiveness of the proposed oscillator.

Corresponding author: Kiichi Niitsu

This work is licensed under a Creative Commons Attribution 4.0 International License.

Cite this article
Shunya Murakami, Kenya Hayashi, Shigeki Arata, Ge Xu, Cong Dang Bui, Atsuki Kobayashi, and Kiichi Niitsu, Design and Verification of Stochastic Oscillator Using Multiple Ring Oscillators and OR-gate for Low-voltage Operation in 65 nm CMOS, Sens. Mater., Vol. 32, No. 8, 2020, p. 2607-2614.