Vanadium oxide (VO2) is a typical metal–insulator transition (MIT) material currently receiving considerable attention because of its MIT occurring at the transition temperature TC of 67 ℃. In this study, VO2/AlN/Si MIT devices with specific temperature sensor characteristics were designed and packaged for commercial use, and their temperature resistance and humidity dependences were studied to determine whether the characteristics of the elements changed over time. Clear epoxy was used as a packaging material. Reliability tests were conducted by fabricating two oxide device package types: SMD 1608 and a 3Φ lamp package used for light-emitting diodes. In high-temperature (60 ℃) storage, low-temperature (−25 ℃) storage, and high-temperature (60 ℃) operation tests, the resistance change was 10% compared with the initial resistance. However, in the high-temperature/high-humidity test (85 ℃/85% RH), the resistance increased by 20%, and the resistance also decreased on the order of 103. Furthermore, when epoxy was applied to each package after conducting a high-temperature/ high-humidity test, the resistance increased by 22%.