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Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
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Sensors and Materials
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Sensors and Materials, Volume 33, Number 6(4) (2021)
Copyright(C) MYU K.K.
pp. 2243-2250
S&M2613 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2021.3319
Published: June 24, 2021

X-ray-induced Luminescence Properties of Nd-doped GdVO4 [PDF]

Masaki Akatsuka, Hiromi Kimura, Daichi Onoda, Daiki Shiratori, Daisuke Nakauchi, Takumi Kato, Noriaki Kawaguchi, and Takayuki Yanagida

(Received January 31, 2021; Accepted May 18, 2021)

Keywords: scintillation, single crystal, near-infrared, dosimetric application

Nd-doped GdVO4 single crystals were synthesized and their photoluminescence and scintillation properties were evaluated. The Nd-doped samples showed scintillation due to the 4f–4f transitions of Nd3+ with peaks at around 900, 1060, and 1320 nm. In addition, we evaluated the relationship between the scintillation signal intensity and the X-ray exposure dose rate for dosimetric application. All the Nd-doped samples demonstrated high sensitivity with a dynamic range from 0.006 to 60 Gy/h.

Corresponding author: Masaki Akatsuka


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Cite this article
Masaki Akatsuka, Hiromi Kimura, Daichi Onoda, Daiki Shiratori, Daisuke Nakauchi, Takumi Kato, Noriaki Kawaguchi, and Takayuki Yanagida, X-ray-induced Luminescence Properties of Nd-doped GdVO4, Sens. Mater., Vol. 33, No. 6, 2021, p. 2243-2250.



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