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Vol. 32, No. 8(2), S&M2292

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Sensors and Materials, Volume 34, Number 2(2) (2022)
Copyright(C) MYU K.K.
pp. 595-602
S&M2831 Research Paper of Special Issue
https://doi.org/10.18494/SAM3684
Published: February 21, 2022

Growth, Optical, and Scintillation Properties of (Gd0.4Lu0.6)8Sr2(SiO4)6O2 Crystals [PDF]

Takayuki Yanagida, Takumi Kato, Daisuke Nakauchi, and Noriaki Kawaguchi

(Received October 9, 2021; Accepted October 27, 2021)

Keywords: scintillator, crystal, apatite, ionizing radiation, scintillation detector

Non-doped and 0.1, 0.5, 1.0, and 2.0% Ce-doped (Gd0.4Lu0.6)8Sr2(SiO4)6O2 crystals were prepared and their optical and scintillation properties were investigated. Their X-ray diffraction (XRD) patterns confirmed that the Ce-doped samples did not contain an impurity phase, whereas the non-doped one contained some impurity phases such as Gd2SiO5 and Lu2SiO5. The emission due to 5d–4f transitions of Ce3+ was observed at 380–650 nm in both the photoluminescence (PL) and scintillation spectra of the Ce-doped samples. The scintillation light yields (LYs) of the 0.5 and 1.0% Ce-doped samples under 241Am α-ray irradiation were ~230 and ~620 ph/5.5 MeV-α, respectively.

Corresponding author: Takayuki Yanagida


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Cite this article
Takayuki Yanagida, Takumi Kato, Daisuke Nakauchi, and Noriaki Kawaguchi, Growth, Optical, and Scintillation Properties of (Gd0.4Lu0.6)8Sr2(SiO4)6O2 Crystals, Sens. Mater., Vol. 34, No. 2, 2022, p. 595-602.



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