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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 34, Number 1(1) (2022)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 37-45
S&M2791 Research Paper https://doi.org/10.18494/SAM3747 Published: January 20, 2022 Microfabrication of Si by KOH Etchant Using Etching Mask Amorphized by Ar Ion Beam [PDF] Mina Sato, Mie Tohnishi, and Akihiro Matsutani (Received November 26, 2021; Accepted December 28, 2021) Keywords: Si, amorphous, KOH, wet chemical etching, ion beam, microfabrication
We demonstrate the microfabrication of Si by KOH wet etching using a mask pattern amorphized by an ion beam as an etching mask. An electron cyclotron resonance ion shower system was used as an ion beam source of 100 to 1000 eV energy. We succeeded in fabricating an etching mask that can etch a Si (110) substrate wafer to a depth of 3.7 µm by amorphizing the Si surface at an ion energy of 400 eV. In addition, we made microfluidic devices and single-cell isolation chips using the proposed microfabrication technique. We believe that the proposed technique will be useful for the microfabrication of Si-based microfluidic devices and biochips.
Corresponding author: Mina Sato  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Mina Sato, Mie Tohnishi, and Akihiro Matsutani, Microfabrication of Si by KOH Etchant Using Etching Mask Amorphized by Ar Ion Beam, Sens. Mater., Vol. 34, No. 1, 2022, p. 37-45. |
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