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Vol. 34, No. 8(3), S&M3042

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Sensors and Materials, Volume 34, Number 3(4) (2022)
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pp. 1255-1264
S&M2888 Research Paper of Special Issue
https://doi.org/10.18494/SAM3757
Published: March 24, 2022

Failure Mechanism and Reinforcement Technology of 55 nm CMOS Inverter Induced by High-power Microwave [PDF]

Jinbin Pan, Yanning Chen, Yang Zhao, Shulong Wang, Dongyan Zhao, Yubo Wang, Zhen Fu, Peng Zhang, Ruiqi Cheng, Jiewei Li, Dong Zhang, Xiao Zhang, and Shushan Shan

(Received November 29, 2021; Accepted February 14, 2022)

Keywords: complementary metal oxide semiconductor, high-power microwave, latch-up, reinforced structure

High-power electromagnetic pulses can transmit a large induced electromotive force or energy through metal interconnection lines, causing interference or damage to integrated circuits. CMOS circuits are the basic components of sensors, so sensors that work in an electromagnetic environment may malfunction. It is of great importance to study the anti-electromagnetic damage technology of CMOS inverters. On the basis of the simulation using Sentaurus, an electrothermal coupling model of a 55 nm CMOS inverter is established. The simulation results show that the latch-up effect is the main mechanism of CMOS failure. In view of the failure process under different high-power microwave (HPM) pulse parameters, we propose a CMOS inverter reinforcement technology. Research shows that the source injection current of the reinforced structure is more than ten times less than that of the traditional structure under electromagnetic interference, which effectively suppresses the occurrence of latch-up.

Corresponding author: Shulong Wang

This work is licensed under a Creative Commons Attribution 4.0 International License.

Cite this article
Jinbin Pan, Yanning Chen, Yang Zhao, Shulong Wang, Dongyan Zhao, Yubo Wang, Zhen Fu, Peng Zhang, Ruiqi Cheng, Jiewei Li, Dong Zhang, Xiao Zhang, and Shushan Shan, Failure Mechanism and Reinforcement Technology of 55 nm CMOS Inverter Induced by High-power Microwave, Sens. Mater., Vol. 34, No. 3, 2022, p. 1255-1264.