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Sensors and Materials, Volume 34, Number 11(4) (2022)
Copyright(C) MYU K.K.
pp. 4209-4222
S&M3106 Research paper
Published: November 30, 2022

Investigation of Drift in Polyurethane Matrices for Salivary Nitrate Ion-selective Field-effect Transistors [PDF]

Shuto Osaki, Kenichi Kitamura, Takuya Kintoki, Takayo Moriuchi-Kawakami, and Shin-ichi Wakida

(Received September 16, 2022; Accepted November 4, 2022)

Keywords: ion-selective membrane, ISFETs, polyurethane, salivary nitrate, stress monitoring

We systematically investigated the drift of ion-selective field-effect transistors (ISFETs) using a series of polyurethanes as a polymer matrix. Drift is one of the shortcomings of ISFETs that adopt a polymeric ion-selective membrane. The drift is caused by the pH change in the aqueous layer between the ion-selective membrane and the pH-sensitive gate of the ISFET. We previously reported NO3−-ISFETs with a novel polyurethane P7281-PU, which give specific stable values. This polyurethane showed less drift than conventional polyvinyl chloride. We considered that the urethane bonds in the ion-selective membrane might capture the diffused H+ or OH− ions that induce the drift. In this study, we investigate a polyurethane composed of an ion-selective membrane and consider how the condition and performance of the ion-selective membrane affect the drift. We selected eight types of polyurethane with almost the same composition as P7281-PU for comparison. We confirmed a narrower variation range of 4.5 mV/h from ISFETs with polyurethane P7293-PU than those of 33.7 mV/h from PVC and 5.0 mV/h from P7281-PU through drift tests using artificial saliva. From the tests, we also confirmed that the drift prevention effect might be caused by the ion-trapping sites generated with the hydrolysis of the urethane bonds.

Corresponding author: Shuto Osaki

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Cite this article
Shuto Osaki, Kenichi Kitamura, Takuya Kintoki, Takayo Moriuchi-Kawakami, and Shin-ichi Wakida, Investigation of Drift in Polyurethane Matrices for Salivary Nitrate Ion-selective Field-effect Transistors , Sens. Mater., Vol. 34, No. 11, 2022, p. 4209-4222.

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