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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 36, Number 1(2) (2024)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 149-154
S&M3504 Research Paper of Special Issue https://doi.org/10.18494/SAM4629 Published: January 26, 2024 Comparison Between Neutron Bragg Dip and Electron Backscatter Diffraction Images of TlBr Semiconductors [PDF] Kenichi Watanabe, Yusuke Sugai, Sota Hasegawa, Keitaro Hitomi, Mitsuhiro Nogami, Takenao Shinohara, Yuhua Su, Joseph Don Parker, and Winfried Kockelmann (Received September 23, 2023; Accepted December 5, 2023) Keywords: TlBr semiconductor detector, neutron diffraction, energy-resolved neutron imaging, electron backscatter diffraction
Thallium bromide (TlBr) semiconductor detectors are promising candidates for high-detection-efficiency, high-energy-resolution, and room-temperature gamma-ray spectrometers. In this study, we conducted neutron Bragg dip and electron backscatter diffraction (EBSD) imaging of TlBr crystals to measure the crystal orientation distribution. We confirmed that crystal grains were continuous over a certain distance along the solidification direction for samples fabricated with the current growth procedure. Finally, we compared the crystal orientation maps obtained with the two techniques. The two types of maps showed similar patterns. We concluded that EBSD, which can observe only surfaces, can be utilized to assess the uniformity of the bulky TlBr crystal, especially when observing the crystal surface perpendicular to the solidification direction.
Corresponding author: Kenichi Watanabe  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Kenichi Watanabe, Yusuke Sugai, Sota Hasegawa, Keitaro Hitomi, Mitsuhiro Nogami, Takenao Shinohara, Yuhua Su, Joseph Don Parker, and Winfried Kockelmann, Comparison Between Neutron Bragg Dip and Electron Backscatter Diffraction Images of TlBr Semiconductors, Sens. Mater., Vol. 36, No. 1, 2024, p. 149-154. |
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