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Vol. 32, No. 8(2), S&M2292

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Sensors and Materials
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Sensors and Materials, Volume 36, Number 1(2) (2024)
Copyright(C) MYU K.K.
pp. 199-207
S&M3510 Research Paper of Special Issue
https://doi.org/10.18494/SAM4665
Published: January 26, 2024

In/CdTe/Au p–n Gamma-ray Detectors Fabricated Using n-type Layer Formed by Laser-induced Back-side Doping with Nd:YAG Laser [PDF]

Taku Miyake, Junichi Nishizawa, Akifumi Koike, Toru Aoki, and Hidenori Mimura

(Received September 21, 2023; Accepted November 20, 2023)

Keywords: laser doping, pn diode, CdTe gamma-ray detector, indium doping

An n-type layer was formed in p-type CdTe via the laser-induced back-side doping of In with a Nd:YAG laser. Hall effect measurements confirmed the formation of an n-type layer on the In- doped area. The In/CdTe/Au p–n diode was fabricated as a gamma-ray detector via laser-induced back-side doping. A guard-ring structure was introduced into the In anode electrode to realize an electron-collecting-type detector with a low leakage current, although pixelation on the In anode side was difficult. In the In/CdTe/Au p–n gamma-ray detector, rectification behavior was clearly observed, and the leakage current of the central electrode was 13 nA at a reverse voltage of 500 V. The energy spectra of 241Am and 57Co radioisotopes were collected at room temperature and showed energy resolutions (full width at half maximum) of 2.9 and 3.6 keV for gamma rays of 59.5 and 122 keV, respectively.

Corresponding author: Taku Miyake


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Cite this article
Taku Miyake, Junichi Nishizawa, Akifumi Koike, Toru Aoki, and Hidenori Mimura, In/CdTe/Au p–n Gamma-ray Detectors Fabricated Using n-type Layer Formed by Laser-induced Back-side Doping with Nd:YAG Laser, Sens. Mater., Vol. 36, No. 1, 2024, p. 199-207.



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