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Vol. 34, No. 8(3), S&M3042

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Vol. 32, No. 8(2), S&M2292

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Sensors and Materials
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Sensors and Materials, Volume 36, Number 5(1) (2024)
Copyright(C) MYU K.K.
pp. 1835-1848
S&M3638 Research Paper of Special Issue
https://doi.org/10.18494/SAM4802
Published: May 15, 2024

Fabrication and Properties of Tungsten-doped Indium Oxide Ultraviolet Photodetector [PDF]

Artde Donald Kin-Tak Lam, Sheng-Po Chang, Chieh-Yu Kuan, and Shoou-Jinn Chang

(Received September 8, 2023; Accepted April 23, 2024)

Keywords: indium tungsten oxide, photodetectors, cosputtering, annealing, ultraviolet

In this study, we deposit tungsten-doped indium oxide (InWO) thin films as an active layer for ultraviolet (UV) photodetectors (PDs) by radio-frequency (RF) magnetron cosputtering and discuss the optical and electrical properties of the thin film under different process conditions. The introduction of oxygen gas during the thermal annealing of oxide thin films leads to further rearrangement of the lattice and fulfills the oxygen deficiency region. When InWO thin films are thermally annealed in oxygen ambient, its photo–dark current ratio can be greatly improved. Thus, InWO UV PDs with active layers fabricated by cosputtering with sputtering powers of 80 W for the In2O3 target and 5 W for the WO3 target followed by thermal annealing for 1 h in oxygen ambient have the highest performance with an ON/OFF current ratio greater than 106, a responsivity of 160 A W−1, and a UV-to-visible rejection ratio of 4.71 × 104. Also, time-dependent switching properties have been demonstrated.

Corresponding author: Sheng-Po Chang


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Cite this article
Artde Donald Kin-Tak Lam, Sheng-Po Chang, Chieh-Yu Kuan, and Shoou-Jinn Chang, Fabrication and Properties of Tungsten-doped Indium Oxide Ultraviolet Photodetector, Sens. Mater., Vol. 36, No. 5, 2024, p. 1835-1848.



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