Young Researcher Paper Award 2023
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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 36, Number 5(1) (2024)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 1835-1848
S&M3638 Research Paper of Special Issue https://doi.org/10.18494/SAM4802 Published: May 15, 2024 Fabrication and Properties of Tungsten-doped Indium Oxide Ultraviolet Photodetector [PDF] Artde Donald Kin-Tak Lam, Sheng-Po Chang, Chieh-Yu Kuan, and Shoou-Jinn Chang (Received September 8, 2023; Accepted April 23, 2024) Keywords: indium tungsten oxide, photodetectors, cosputtering, annealing, ultraviolet
In this study, we deposit tungsten-doped indium oxide (InWO) thin films as an active layer for ultraviolet (UV) photodetectors (PDs) by radio-frequency (RF) magnetron cosputtering and discuss the optical and electrical properties of the thin film under different process conditions. The introduction of oxygen gas during the thermal annealing of oxide thin films leads to further rearrangement of the lattice and fulfills the oxygen deficiency region. When InWO thin films are thermally annealed in oxygen ambient, its photo–dark current ratio can be greatly improved. Thus, InWO UV PDs with active layers fabricated by cosputtering with sputtering powers of 80 W for the In2O3 target and 5 W for the WO3 target followed by thermal annealing for 1 h in oxygen ambient have the highest performance with an ON/OFF current ratio greater than 106, a responsivity of 160 A W−1, and a UV-to-visible rejection ratio of 4.71 × 104. Also, time-dependent switching properties have been demonstrated.
Corresponding author: Sheng-Po Chang  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Artde Donald Kin-Tak Lam, Sheng-Po Chang, Chieh-Yu Kuan, and Shoou-Jinn Chang, Fabrication and Properties of Tungsten-doped Indium Oxide Ultraviolet Photodetector, Sens. Mater., Vol. 36, No. 5, 2024, p. 1835-1848. |
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