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Sensors and Materials, Volume 37, Number 5(2) (2025)
Copyright(C) MYU K.K.

pp. 1969-1975
S&M4034 Research Paper of Special Issue
https://doi.org/10.18494/SAM5588
Published: May 23, 2025

Attempt to Impart Conductivity to Thallium Bromide by Thermal Diffusion Doping [PDF]

Naoya Yamaishi, Mikio Higuchi, Satoshi Yoshitake, and Junichi H. Kaneko

(Received February 10, 2025; Accepted April 16, 2025)

Keywords: semiconductor, thallium bromide, radiation detector, gamma ray, polarization, doping

As part of the development of thallium bromide (TlBr) semiconductor detectors, impurity doping into TlBr by the thermal diffusion method was attempted, along with the exploration of ohmic electrodes. Dopant materials with ionic radii and valence similar to those of Tl or Br were selected. In TlBr samples of 1 mm thickness, Sr and Pb doping improved the leakage current by approximately 8 times compared with undoped samples under an applied voltage of −100 V. Various metal electrodes were formed on TlBr samples doped with Sr or Pb, and their I–V characteristics were evaluated. Rectifying properties were observed in the Pb-doped samples with Ti and In, as well as in the Sr-doped samples with Ti. These results suggest that Sr-doped TlBr and Ti may have potential for use as injection electrodes.

Corresponding author: Naoya Yamaishi

This work is licensed under a Creative Commons Attribution 4.0 International License.

Cite this article
Naoya Yamaishi, Mikio Higuchi, Satoshi Yoshitake, and Junichi H. Kaneko, Attempt to Impart Conductivity to Thallium Bromide by Thermal Diffusion Doping, Sens. Mater., Vol. 37, No. 5, 2025, p. 1969-1975.