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Sensors and Materials
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Sensors and Materials, Volume 20, Number 8 (2009)
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pp. 447-455 S&M742 Research Paper of Special Issue https://doi.org/10.18494/SAM.2009.576Published: March 19, 2009 Infrared and Thermoelectric Properties of BixTey-Based Alloyed Thin Films [ PDF]
Tomoya Ino and Shigeo Yamaguchi (Received August 14, 2008; Accepted December 25, 2008) Keywords: BiTe, InSb, infrared
We studied the infrared (IR) and thermoelectric properties of (BixTey+Cd) and (BixTey+InSb) alloyed thin films prepared on SiO2 glass substrates by electron beam evaporation (EB). Cd was used in terms of the enhancement of sensitivity to IR radiation because CdTe is known to be highly sensitive to IR radiation. The voltage sensitivities were 0.71 and 43.9 mV for Bi2Te2.4 and Bi2Cd2.6Te5.5, respectively, at a bias current of 10 mA and a blackbody furnace temperature of 1000°C. The maximum values of the power factor (Pf) were 1.15×10–3 W/mK2 at 450 K for Bi2Te2.4, 2.46×10–4 W/mK2 at 550 K for Bi2Te3.6+InSb6, and 8.90×10–6 W/mK2 at 550 K for InSb2.2.
Corresponding author: Shigeo Yamaguchi Cite this articleTomoya Ino and Shigeo Yamaguchi, Infrared and Thermoelectric Properties of BixTey-Based Alloyed Thin Films, Sens. Mater., Vol. 20, No. 8, 2009, p. 447-455.
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