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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 21, Number 3 (2009)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 167-177
S&M757 Research Paper https://doi.org/10.18494/SAM.2009.580 Published: June 11, 2009 Proposal of a Double-Gate Split-Drain/Source MAGFET with Bulk Conduction in FD SOI Technology [PDF] Nebojsa D. Jankovic (Received October 28, 2008; Accepted February 10, 2009) Keywords: magnetic, sensor, MAGFET, SOI, fully depleted
In this paper, the design and operation of a double-gate split-drain/source magnetic field-effect transistor (DG SDS MAGFET) compatible with fully depleted (FD) thin-film silicon-on-isolator (SOI) technology are described. Owing to bulk conduction and carrier-domain-based operation of a DG SDS MAGFET, a magnetic sensitivity of 58 T–1 in the mT range of magnetic fields is predicted from a three-dimensional sensor numerical simulation. This is almost two orders of magnitude higher than the magnetic sensitivity achieved with conventionally designed MAGFETs in FD SOI technology. In addition, the simulation results revealed that the DG SDS MAGFET can also operate as a bidirectional cross-switch controlled by a pulsed magnetic field with an amplitude above 30 mT.
Corresponding author: Nebojsa D. Jankovic Cite this article Nebojsa D. Jankovic, Proposal of a Double-Gate Split-Drain/Source MAGFET with Bulk Conduction in FD SOI Technology, Sens. Mater., Vol. 21, No. 3, 2009, p. 167-177. |
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