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Sensors and Materials, Volume 21, Number 7 (2009)
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pp. 373-383
S&M777 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2009.603
Published: October 22, 2009

Fabrication of Carbon Nanotube Via Interconnects at Low Temperature and Their Robustness over a High-Density Current [PDF]

Shintaro Sato, Akio Kawabata, Tatsuhiro Nozue, Daiyu Kondo, Tomo Murakami, Takashi Hyakushima, Mizuhisa Nihei and Yuji Awano

(Received June 1, 2009; Accepted June 8, 2009)

Keywords: carbon nanotube, LSI, interconnect, via, growth, low temperature, catalyst, nanoparticle, particle, impactor

We fabricated carbon nanotube (CNT) via interconnects (vertical wiring) and evaluated their robustness over a high-density current. Multiwalled carbon nanotubes (MWNTs) were grown at temperatures as low as 365°C using Co catalyst nanoparticles, which were formed and deposited by a custom-designed particle generation and deposition system. MWNTs were successfully grown in via holes with a diameter as small as 40 nm. The resistance of CNT vias with a diameter of 160 nm was found to be of the same order as that of tungsten plugs. The CNT vias were able to sustain a current density as high as 5.0×106 A/cm2 at 105°C for 100 h without any deterioration in their properties.

Corresponding author: Shintaro Sato

Cite this article
Shintaro Sato, Akio Kawabata, Tatsuhiro Nozue, Daiyu Kondo, Tomo Murakami, Takashi Hyakushima, Mizuhisa Nihei and Yuji Awano, Fabrication of Carbon Nanotube Via Interconnects at Low Temperature and Their Robustness over a High-Density Current, Sens. Mater., Vol. 21, No. 7, 2009, p. 373-383.