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Notice of retraction
Vol. 34, No. 8(3), S&M3042

Notice of retraction
Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
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Sensors and Materials, Volume 25, Number 3 (2013)
Copyright(C) MYU K.K.
pp. 155-164
S&M910 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2013.853
Published: March 28, 2013

Current Status and Future Prospects of Ammonothermal Bulk GaN Growth [PDF]

Tadao Hashimoto, Edward Letts and Sierra Hoff

(Received September 26, 2012; Accepted December 17, 2012)

Keywords: ammonothermal growth, bulk GaN, dislocation density, optical absorption

This paper reviews the current status of ammonothermal GaN growth at SixPoint Materials, Inc., and discusses challenges in the commercialization of the technology. Small prototype bulk GaN crystals show a high-quality microstructure as well as improved transparency. The full width at half maximum of the X-ray rocking curves from 002 and 201 diffractions typically ranges from a few tens to a few hundred arcsec. The minimum optical absorption coefficient at 450 nm is currently 4 cm–1. To commercialize this technology, expansion of the crystal size is essential. Future tasks include the development of a large reactor, the preparation of large seed crystals and the reduction of the number of cracks in crystals.

Corresponding author: Tadao Hashimoto


Cite this article
Tadao Hashimoto, Edward Letts and Sierra Hoff, Current Status and Future Prospects of Ammonothermal Bulk GaN Growth, Sens. Mater., Vol. 25, No. 3, 2013, p. 155-164.



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