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Vol. 34, No. 8(3), S&M3042

Notice of retraction
Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.

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Sensors and Materials, Volume 25, Number 3 (2013)
Copyright(C) MYU K.K.
pp. 205-217
S&M914 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2013.858
Published: March 28, 2013

Growth of AlxGa1-xN Structures on 8 in. Si(111) Substrates [PDF]

Balakrishnan Krishnan, Seungjae Lee, Hongwei Li, Jie Su, Dong Lee and Ajit Paranjpe

(Received October 10, 2012; Accepted February 20, 2013)

Keywords: MOCVD, GaN, AlxGa1-xN, Si substrate, wafer curvature

Device-oriented GaN layers have been grown with AlxGa1−xN buffer structures as a bottom layer on 8 in. Si substrates using a commercial high-throughput metal organic chemical vapor deposition (MOCVD) system. The effect of the V/III ratio on the growth of AlN nucleation layers formed directly on Si(111) substrates has been analyzed. The effects of parasitic reactions between the group III precursor and ammonia have been observed to be a major stumbling block in achieving a high growth rate with better crystalline quality of AlN layers on Si(111) substrates. In addition, the effect of the growth rate of strain-relieving AlxGa1−xN buffer structures on the wafer curvature of GaN structures during growth has been studied. It was found that the rapid growth of AlxGa1−xN buffer structures helps reduce wafer bowing in GaN grown on top of the buffer structures.

Corresponding author: Balakrishnan Krishnan


Cite this article
Balakrishnan Krishnan, Seungjae Lee, Hongwei Li, Jie Su, Dong Lee and Ajit Paranjpe, Growth of AlxGa1-xN Structures on 8 in. Si(111) Substrates, Sens. Mater., Vol. 25, No. 3, 2013, p. 205-217.



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