pp. 225-234
S&M986 Research Paper of Special Issue https://doi.org/10.18494/SAM.2014.971 Published: May 27, 2014 Development Status of Type II Superlattice Infrared Detector in JAXA [PDF] Haruyoshi Katayama, Michito Sakai, Junpei Murooka, Masafumi Kimata, Takahiro Kitada, Toshiro Isu, Mikhail Patrashin, Iwao Hosako and Yasuhiro Iguchi (Received December 11, 2013; Accepted March 24, 2014) Keywords: InAs/GaSb Type II superlattice infrared detectors, mid-wave infrared
We present the development status of a Type II superlattice (T2SL) infrared detector for future space applications in JAXA. InAs/GaSb T2SL is the only known infrared material that has a theoretically predicted higher performance than HgCdTe. We first fabricated a single-pixel detector with a cutoff wavelength of 6 µm. The detector is a pin photodiode with a superlattice consisting of 9 InAs monolayers (MLs) and 7 GaSb MLs. The dark current density of the detector is 1.8 × 10−4 A/cm2 at a bias voltage of −100 mV. We also present the results of an optical evaluation of the detector. The cutoff wavelength is 5.5 µm at 30 K. The responsivity is 0.3 ± 0.05 A/W at 4.5 µm. We also show the development of an array detector with a cutoff wavelength of 6 µm. However, further improvements are required for developing array detectors with longer cutoff wavelengths.
Corresponding author: Haruyoshi KatayamaCite this article Haruyoshi Katayama, Michito Sakai, Junpei Murooka, Masafumi Kimata, Takahiro Kitada, Toshiro Isu, Mikhail Patrashin, Iwao Hosako and Yasuhiro Iguchi, Development Status of Type II Superlattice Infrared Detector in JAXA, Sens. Mater., Vol. 26, No. 4, 2014, p. 225-234. |