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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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English 日本語
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MYU K.K.
Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 26, Number 6 (2014)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 435-445
S&M1011 Research Paper of Special Issue https://doi.org/10.18494/SAM.2014.975 Published: July 29, 2014 Influence of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing of Large-Diameter Silicon Wafer Applied to Substrate of GaN-Based LEDs [PDF] Michio Uneda, Yuki Maeda, Kazutaka Shibuya, Yoshio Nakamura, Daizo Ichikawa, Kiyomi Fujii and Ken-ichi Ishikawa (Received December 26, 2013; Accepted April 17, 2014) Keywords: silicon wafer, GaN growth substrate, polishing, pad surface asperity, contact image analysis, removal rate, multiple correlation analysis
Currently, large-diameter silicon (Si) wafers have been applied to the substrate of GaN-based light-emitting diodes (LEDs) for realizing low carbon societies at a low cost. In the Si polishing process, the removal rate is strongly dependent on the pad surface asperity. We have developed a quantitative evaluation method based on contact image analysis using an image rotation prism. In this paper, we discuss the influences of pad surface asperity on removal rate for Si wafers determined by various polishing tests. The results indicated a high removal rate in the following case: number of contact points, 30/mm2; contact ratio, 0.8%; spacing of contact points, 450 µm; and spatial fast Fourier transform (FFT) results, 100 µm. Furthermore, the removal rate can be precisely estimated using four evaluation parameters by multiple correlation analysis.
Corresponding author: Michio Uneda Cite this article Michio Uneda, Yuki Maeda, Kazutaka Shibuya, Yoshio Nakamura, Daizo Ichikawa, Kiyomi Fujii and Ken-ichi Ishikawa, Influence of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing of Large-Diameter Silicon Wafer Applied to Substrate of GaN-Based LEDs, Sens. Mater., Vol. 26, No. 6, 2014, p. 435-445. |
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