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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 26, Number 6 (2014)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 385-392
S&M1006 Research Paper of Special Issue https://doi.org/10.18494/SAM.2014.976 Published: July 29, 2014 Ammonothermal Bulk GaN Growth and Its Processing [PDF] Tadao Hashimoto, Edward Letts, Daryl Key, Keith Male, Matthew Michaels and Sierra Hoff (Received January 6, 2014; Accepted May 7, 2014) Keywords: ammonothermal growth, bulk GaN, dislocation density, optical absorption, wafer processing
In this paper, we overview the current progress of ammonothermal GaN growth at SixPoint Materials, Inc. and discuss issues in wafer processing. Bulk GaN crystals grown in small prototype reactors present a high-quality microstructure as well as an improved transparency. The dislocation density of the crystal is on the order of 4.0 × 104 cm−2. The optical absorption coefficient as low as 4 cm−1 at 450 nm is obtained. Wafer processing techniques, such as wire sawing and chemical mechanical polishing, are one of the challenges in realizing GaN wafers. Crystal cracks are the major and fundamental obstacle in achieving a high-quality surface during wire sawing. The surface quality after chemical mechanical polishing (CMP) is successfully evaluated using X-ray diffraction.
Corresponding author: Tadao Hashimoto Cite this article Tadao Hashimoto, Edward Letts, Daryl Key, Keith Male, Matthew Michaels and Sierra Hoff, Ammonothermal Bulk GaN Growth and Its Processing, Sens. Mater., Vol. 26, No. 6, 2014, p. 385-392. |
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