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Notice of retraction
Vol. 34, No. 8(3), S&M3042

Notice of retraction
Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.

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Sensors and Materials, Volume 26, Number 6 (2014)
Copyright(C) MYU K.K.
pp. 429-434
S&M1010 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2014.979
Published: July 29, 2014

Dependence of GaN Removal Rate of Plasma Chemical Vaporization Machining on Mechanically Introduced Damage [PDF]

Yasuhisa Sano, Toshiro K. Doi, Syuhei Kurokawa, Hideo Aida, Osamu Ohnishi, Michio Uneda, Kousuke Shiozawa, Yu Okada and Kazuto Yamauchi

(Received April 15, 2014; Accepted June 10, 2014)

Keywords: hard-to-machine material, atmospheric-pressure plasma, PCVM, damaged layer, GaN

A high-efficiency planarization method combining atmospheric-pressure plasma etching [plasma chemical vaporization machining (PCVM)] and mechanical polishing is proposed. The convex part of a substrate surface, considered to be affected by mechanical action, is removed preferentially by PCVM. However, it is not evident whether the PCVM removal rate of the damaged layer of a gallium nitride (GaN) substrate increases. In this study, the dependence of removal rate on removal depth is investigated using a GaN substrate with a damaged layer. As a result, the removal rate of the damaged layer is observed to be three or four times greater than that of deep undamaged layers.

Corresponding author: Yasuhisa Sano


Cite this article
Yasuhisa Sano, Toshiro K. Doi, Syuhei Kurokawa, Hideo Aida, Osamu Ohnishi, Michio Uneda, Kousuke Shiozawa, Yu Okada and Kazuto Yamauchi, Dependence of GaN Removal Rate of Plasma Chemical Vaporization Machining on Mechanically Introduced Damage, Sens. Mater., Vol. 26, No. 6, 2014, p. 429-434.



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