S&M2933 Technical Paper of Special Issue
Published: May 17, 2022
Electrostatic Discharge Reliability Sensing of Ultrahigh-voltage N-channel Laterally Diffused MOSFETs Modulated by Different Operating Voltages [PDF]
Jhong-Yi Lai, Shen-Li Chen, Zhi-Wei Liu, Hung-Wei Chen, Hsun-Hsiang Chen, and Yi-Mu Lee
(Received December 2, 2021; Accepted March 28, 2022)
Keywords: bipolar-CMOS-DMOS (BCD), device under test (DUT), electrostatic discharge (ESD), holding voltage (Vh), laterally diffused MOSFET (LDMOS), optical microscopy (OM), secondary breakdown current (It2), transmission-line pulse (TLP), trigger voltage (Vt1), ultrahigh voltage (UHV)
In this paper, electrostatic discharge (ESD) reliability sensing components for use in ultrahigh- to low-voltage environments were fabricated via a Taiwan Semiconductor Manufacturing Company (TSMC) 0.5 µm ultrahigh voltage (UHV) bipolar-CMOS-DMOS (BCD) process. To understand the trend of the capability of different voltage components under ESD stress, we designed ESD sensing components that can be used at different voltages. These ESD sensing components will be implemented using a circular layout. By changing the drift region and Poly2 parameters with a fixed gate terminal, we proposed a new design with eight sets of parameters. As the length of the drain-side drift region (LD) increases, the parasitic resistance of the drift region also increases, which will improve the ability of the device to withstand ESD currents. Eventually, to further analyze the ESD capability of the component, a transmission-line pulse (TLP) test system was used for the DUT. When LD is 28 µm, the device is optimal. The It2 of the device can reach 4.43 A. The FOM is also used to determine the ESD capability of the component, which can reach a maximum of 3.15 × 102 (A·V/µm2).Corresponding author: Shen-Li Chen
This work is licensed under a Creative Commons Attribution 4.0 International License.
Cite this article
Jhong-Yi Lai, Shen-Li Chen, Zhi-Wei Liu, Hung-Wei Chen, Hsun-Hsiang Chen, and Yi-Mu Lee, Electrostatic Discharge Reliability Sensing of Ultrahigh-voltage N-channel Laterally Diffused MOSFETs Modulated by Different Operating Voltages, Sens. Mater., Vol. 34, No. 5, 2022, p. 1835-1844.