pp. 315-319
S&M771 Short Notes https://doi.org/10.18494/SAM.2009.583 Published: September 30, 2009 Fabrication of Buried Nanochannels by Transferring Metal Nanowire Patterns [PDF] Daniel S. Choi and Eui-Hyeok Yang (Received December 8, 2008; Accepted June 10, 2009) Keywords: nanochannel, pattern transfer, metal nanowire, oxide nanowire, focused ion beam, FIB milling
A method of fabricating channels with widths of 30–50 nm in silicon substrates with channels buried under overlying layers of dielectric materials has been demonstrated. Buried nanochannels with an opening size of 20×80 nm2 have been successfully fabricated on a silicon wafer by transferring metal nanowire patterns. With further refinement, the method might be useful for fabricating nanochannels for the manipulation and analysis of large biomolecules at single-molecule resolution.
Corresponding author: Daniel S. ChoiCite this article Daniel S. Choi and Eui-Hyeok Yang, Fabrication of Buried Nanochannels by Transferring Metal Nanowire Patterns, Sens. Mater., Vol. 21, No. 6, 2009, p. 315-319. |