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Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials, Volume 25, Number 6 (2013)
Copyright(C) MYU K.K.
pp. 341-346 S&M924 Research Paper of Special Issue https://doi.org/10.18494/SAM.2013.866Published: August 26, 2013 Low-Power Temperature Sensor with Complementary-Metal-Oxide-Semiconductor Circuits [ PDF]
Shu-Chung Yi (Received November 5, 2012; Accepted February 4, 2013) Keywords: CMOS sensor, PTAT, subthreshold region, temperature sensor
A low-power smart temperature sensor is proposed in this paper. The sensor was composed of a proportional-to-absolute-temperature (PTAT) circuit and a ring oscillator. The PTAT circuit was used to generate a temperature-related current. The current was used to drive the ring oscillator, which may generate a temperature-related oscillated signal. The sensor was implemented by the 0.35 µm 2P4M TSMC complementarymetal- oxide-semiconductor (CMOS) process technology. The power consumption is about 195.15 nW. The linearity of the output frequency versus temperature is marked by the R-square rule. The value of the linearity is 0.98 in the entire temperature range. The proposed sensor requires only one supply voltage of 3.3 V. The core area of the sensor is small enough for combining itself with other circuits that require temperature monitoring.
Corresponding author: Shu-Chung Yi Cite this articleShu-Chung Yi, Low-Power Temperature Sensor with Complementary-Metal-Oxide-Semiconductor Circuits, Sens. Mater., Vol. 25, No. 6, 2013, p. 341-346.
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