pp. 591-598
S&M1025 Research Paper of Special Issue https://doi.org/10.18494/SAM.2014.1001 Published: October 21, 2014 Fabrication and Characterization of d33 Mode (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT) Energy Harvester [PDF] Bin Yang, Yanbo Zhu, Xingzhao Wang, Jingquan Liu and Chunsheng Yang (Received January 8, 2014; Accepted June 12, 2014) Keywords: d33 mode, energy harvester, bonding and grinding, MEMS
In this manuscript, a d33 mode piezoelectric micro-electromechanical systems (MEMS) energy harvester integrated with silicon proof mass, which is made of composite cantilever beams from a silicon layer and a single crystal PMN-PT thick film, is proposed. The silicon mass is fabricated by the deep-reactive ion etching (DRIE) process to reduce the resonant frequency for a matching ambient source. A PMN-PT film of 15 µm thickness is realized by the hybrid process of wafer bonding and grinding. The experimental results show that this fabricated prototype can generate a maximum output voltage of 1.18 VP-P and corresponding power of 0.139 µW at the resonant frequency of 200 Hz and vibration acceleration of 2 g.
Corresponding author: Bin YangCite this article Bin Yang, Yanbo Zhu, Xingzhao Wang, Jingquan Liu and Chunsheng Yang, Fabrication and Characterization of d33 Mode (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT) Energy Harvester, Sens. Mater., Vol. 26, No. 8, 2014, p. 591-598. |