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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 14, Number 5 (2002)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 231-238
S&M485 Research Paper of Special Issue Published: 2002 Characteristics of Plasmaless Dry Etching of Silicon-Related Materials Using Chlorine Trifluoride Gas [PDF] Yoji Saito Keywords: plasmaless dry etching, isotropic etching, silicon, silicon dioxide, chlorine trifluoride
Silicon substrates and thermally grown oxide films were exposed to ClF3 gas at various temperatures between room temperature and 600℃. Above room temperature, the activation energy of the silicon etch rate is 0.18 eV. The activation energy of Si02 etch rate below 400℃ is estimated to be 0.12±0.01 eV. The obtained etch selectivity of silicon with respect to the Si02 is 100-300 between room temperature and 400℃. An enhanced etch rate is observed for the n-type silicon with low resistivity near room temperature. The CIF3 gas, which has appropriate vapor pressure, has useful properties not only for in-situ cleaning but also for micromachining of silicon-related materials.
 Cite this article Yoji Saito, Characteristics of Plasmaless Dry Etching of Silicon-Related Materials Using Chlorine Trifluoride Gas, Sens. Mater., Vol. 14, No. 5, 2002, p. 231-238. |
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