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Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
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Sensors and Materials, Volume 14, Number 5 (2002)
Copyright(C) MYU K.K.
pp. 231-238
S&M485 Research Paper of Special Issue
Published: 2002

Characteristics of Plasmaless Dry Etching of Silicon-Related Materials Using Chlorine Trifluoride Gas [PDF]

Yoji Saito

Keywords: plasmaless dry etching, isotropic etching, silicon, silicon dioxide, chlorine trifluoride

Silicon substrates and thermally grown oxide films were exposed to ClF3 gas at various temperatures between room temperature and 600℃. Above room temperature, the activation energy of the silicon etch rate is 0.18 eV. The activation energy of Si02 etch rate below 400℃ is estimated to be 0.12±0.01 eV. The obtained etch selectivity of silicon with respect to the Si02 is 100-300 between room temperature and 400℃. An enhanced etch rate is observed for the n-type silicon with low resistivity near room temperature. The CIF3 gas, which has appropriate vapor pressure, has useful properties not only for in-situ cleaning but also for micromachining of silicon-related materials.


Cite this article
Yoji Saito, Characteristics of Plasmaless Dry Etching of Silicon-Related Materials Using Chlorine Trifluoride Gas, Sens. Mater., Vol. 14, No. 5, 2002, p. 231-238.

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