2H-AlN layers were grown on 6H-SiC substrates by sublimation epitaxy. In the growth of AlN, AlN powder and 6H-SiC (0001) Si-face 3.5° off-oriented toward <1120> substrates were set in a graphite crucible as the source and the substrate, respectively. The crucible was heated by an inductively coupled RF generator. Additionally, a Ta sheet was placed in the reaction space in order to suppress the reaction of N2 with C. The growth of 2H-AlN on 6H-SiC was confirmed by X-ray diffraction and Raman scattering. At pressures of 1.0x10^5 Pa and 0.4 Pa, epitaxial layers were grown by step-flow growth without sub-grains and three-dimensional growth with sub-grains, respectively.