Lead zirconate titanate (PZT) thin films with highly oriented perovskite phase were prepared by two kinds of processes: (1) reactive DC sputtering with two facing metal targets, and (2) radio frequency (RF) sputtering with two facing PZT ceramic targets. The reactive DC sputtering deposition rate is 10 times as high as that of deposition by RF sputtering with ceramic targets. The 500℃-deposited film shows ferroelectric property with the values of remanent polarization (Pr) of 5.6 μC/cm^2 and saturation polarization (Ps) of 22.5 μC/cm2. A multistep process was used for preparing ( 111) miented PZT thick film with excellent properties by RF facing target sputtering. Suppression of cracks could be observed in PZT films with this multilayer structure. The XRD results showed that all films in the experiments showed a strong orientation of (111) perovskite phase. The polarization-electric field (P-E) hysteresis loops were improved with film thickness and Pr developed from 7 μC/cm^2 to 30 μC/cm2, as film thickness increased from 0.24 to 4.6 µm. The dielectric constant also increased with film thickness, and reached the maximum value of 1300.