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Sensors and Materials, Volume 15, Number 2 (2003)
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pp. 53-65
S&M509 Research Paper of Special Issue
Published: 2003

Dependence of the Anisotropy of Wet Chemical Etching of Silicon on the Amount of Surface Coverage by OH Radicals [PDF]

Miguel A. Gosálvez, Adam S. Foster and Risto M. Nieminen

(Received September 19, 2002; Accepted January 20, 2003)

Keywords: anisotropic etching, atomistic simulation, cellular automaton, surface coverage, convex corner, pit nucleation, step propagation

The dependence of the etch rates of different crystallographic orientations on the surface coverage by OH radicals is studied by atomistic simulations using a cellular automaton. We show that the etch rate is a non-monotonic function of OH coverage and that there always exists a coverage value at which the etch rate reaches a maximum. The dependence of the anisotropy of the etching process on coverage, including the dependence of the fastest-etched plane orientation, is implicitly contained in the model, and predictions of convex-corner under-etching structures are made. We show that the entire etching process, including the interplay between step propagation and etch pitting at any surface orientation, is controlled by only a few surface configurations involving a particular type of next-nearest neighbours.

Cite this article
Miguel A. Gosálvez, Adam S. Foster and Risto M. Nieminen, Dependence of the Anisotropy of Wet Chemical Etching of Silicon on the Amount of Surface Coverage by OH Radicals, Sens. Mater., Vol. 15, No. 2, 2003, p. 53-65.