pp. 67-81
S&M510 Research Paper of Special Issue Published: 2003 Modelling of Anisotropic Etching of Silicon: Anomalies due to Facet Boundary Effects [PDF] Ziyad Elalamy, Leslie M. Landsberger, Mojtaba Kahrizi, Anand Pandy, Irina Stateikina and Sébastien Michel (Received September 30, 2002; Accepted February 21, 2003) Keywords: anisotropic etching of silicon, crystal-based modelling anomalies
In the crystal-based modelling of wet anisotropic etching of silicon, one begins with the hypothesis that the etch rate in a specific etchant composition at a given temperature should depend only on the crystal features of the surface exposed to the etchant. However, analysis of experimental data reveals interesting features which contradict this hypothesis. A given crystal surface having particular crystal indices, under a particular set of etchant conditions (composition, temperature), may exhibit significant differences in etch rate. These anomalies are hypothesized to be driven by effects due to the boundaries of the under-etched facets.
Corresponding author: Sébastien MichelCite this article Ziyad Elalamy, Leslie M. Landsberger, Mojtaba Kahrizi, Anand Pandy, Irina Stateikina and Sébastien Michel, Modelling of Anisotropic Etching of Silicon: Anomalies due to Facet Boundary Effects, Sens. Mater., Vol. 15, No. 2, 2003, p. 67-81. |