pp. 191-196
S&M520 Research Paper Published: 2003 Passivation Layer for Anodic Bonding of Silicon to Glass [PDF] Stefan Beißner, Philipp Sichler and Stephanus Büttgenbach (Received February 10, 2003; Accepted July 2, 2003) Keywords: anodic bonding, passivation layer, reactive sputtering, aluminum oxide, breakdown field strength
In order to avoid bonding or sticking of flexible silicon elements during anodic bonding of silicon to glass, we propose to apply a passivation layer of aluminum oxide to the glass surface. The investigated passivation layer was deposited using reactive sputtering of aluminum. Its breakdown field strength was measured and its effectiveness was proved in anodic bonding experiments.
Cite this article Stefan Beißner, Philipp Sichler and Stephanus Büttgenbach, Passivation Layer for Anodic Bonding of Silicon to Glass, Sens. Mater., Vol. 15, No. 4, 2003, p. 191-196. |