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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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English 日本語
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 17, Number 4 (2005)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 199-210
S&M598 Research Paper of Special Issue Published: 2005 Silicon Wet Etch Anisotropy: Analysis of the Impact of {111}-, {110}-, {100}- Terrace Widths [PDF] Irina Stateikina, Leslie M. Landsberger, Mojtaba Kahrizi, Nazmul Hoque and Victo Rossokhaty (Received Ocotber 1, 2004; Accepted March 17, 2005) Keywords: anisotropic etching of silicon, TMAH, step-based model, orientation of crystal facets
A step-based model of wet anisotropic etching of silicon is examined in conjunction with observations from wagon-wheel under-etch experiments of Si{100} and Si{110} in tetra-methyl ammonium hydroxide (TMAH) at 25 wt% at 80C. Stepped surfaces may be composed of flat {111} terraces, and/or flat {100} or {110} terraces. Transitions (cross- overs) between terrace orientations are theoretically analyzed and found to be approxi- mately {331} and {311} planes, respectively. These crossover planes occur at several deviation angles and underetched facets. The theoretical crossovers are compared to experimental observations regarding transitions in facet configuration, roughness, and etch rate. These crossovers may significantly influence the complexity of etch rate variation and facet appearance or disappearance in an underetch experiment.
Corresponding author: Irina Stateikina Cite this article Irina Stateikina, Leslie M. Landsberger, Mojtaba Kahrizi, Nazmul Hoque and Victo Rossokhaty, Silicon Wet Etch Anisotropy: Analysis of the Impact of {111}-, {110}-, {100}- Terrace Widths, Sens. Mater., Vol. 17, No. 4, 2005, p. 199-210. |
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