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Vol. 34, No. 8(3), S&M3042

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Vol. 32, No. 8(2), S&M2292

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Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
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Sensors and Materials, Volume 28, Number 9 (2016)
Copyright(C) MYU K.K.
pp. 975-981
S&M1259 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2016.1386
Published: September 21, 2016

Effect of Sputtering Power on Optical and Electrical Properties of Indium Tin Oxide Films [PDF]

Shiuh-Chuan Her and Chun-Fu Chang

(Received December 21, 2015; Accepted May 25, 2016)

Keywords: indium tin oxide, transmittance, sputtering power, resistivity

Indium tin oxide (ITO) films were deposited onto a glass substrate by direct current (DC) magnetron sputtering. The effect of the sputtering power on the microstructure, electrical, andoptical electrical properties was examined. Experimental results indicated that increasing thesputtering power caused surface roughness to decrease while the resistivity increased. The averageof the optical transmittance in the wavelength region of 300–1200 nm for ITO films decreased from 77 to 73% as the sputtering power increased from 50 to 200 W. Results of this work suggested thata better performance of both optical transparency and electrical conductivity of ITO films can beachieved by operating at a low level of sputtering power.

Corresponding author: Shiuh-Chuan Her


Cite this article
Shiuh-Chuan Her and Chun-Fu Chang, Effect of Sputtering Power on Optical and Electrical Properties of Indium Tin Oxide Films, Sens. Mater., Vol. 28, No. 9, 2016, p. 975-981.



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