pp. 1203-1210
S&M1281 Research Paper of Special Issue https://doi.org/10.18494/SAM.2016.1410 Published: November 16, 2016 Investigation on Reduction Behaviors of SnO2 and SnO2-Supported CuO Sensor Materials by Temperature-Programmed Reduction Method Combined with Resistance Measurement [PDF] Hiroyuki Yamaura, Shinsuke Hirao, Syuhei Yamaguchi, and Hidenori Yahiro (Received May 30, 2016; Accepted August 15, 2016) Keywords: TPR measurement, resistance measurement, semiconductor, tin oxide, copper oxide
Temperature-programmed reduction measurement combined with resistance measurement (TPR&R) was performed to investigate the reduction behavior of the samples containing the semiconductor materials, SnO2 and CuO/SnO2. The four reduction peaks were observed in the H2-TPR profile of SnO2, being assigned to the reductions of surface adsorbed oxygen species, surface lattice oxygen, amorphous SnO2 and bulk SnO2. On the other hand, the H2-TPR profile of CuO/SnO2 was more complicated than that of SnO2. The TPR&R measurement enabled definite assignments of the six reduction peaks of CuO/SnO2: the reductions of (I) Cu2+ to Cu+ in highly dispersed copper oxide, (II) bulk CuO to Cu0, (III) Cu+ to Cu0 in highly dispersed copper oxide, (IV) SnO2 lattice oxygen interacting with highly dispersed copper oxide, (V) amorphous SnO2, and (VI) bulk SnO2.
Corresponding author: Hidenori YahiroCite this article Hiroyuki Yamaura, Shinsuke Hirao, Syuhei Yamaguchi, and Hidenori Yahiro, Investigation on Reduction Behaviors of SnO2 and SnO2-Supported CuO Sensor Materials by Temperature-Programmed Reduction Method Combined with Resistance Measurement, Sens. Mater., Vol. 28, No. 11, 2016, p. 1203-1210. |