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Vol. 34, No. 8(3), S&M3042

Notice of retraction
Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
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Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials, Volume 29, Number 7(2) (2017)
Copyright(C) MYU K.K.
pp. 969-976
S&M1387 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2017.1600
Published: July 26, 2017

A Nonvolatile TID Radiation Sensor Using TANOS for High Response and Good Data Retention [PDF]

Wen-Ching Hsieh, Fuh-Cheng Jong, Hao-Tien Daniel Lee, and Shich-Chuan Wu

(Received April 8, 2016; Accepted May 10, 2017)

Keywords: high-k, sensor, SONOS, MOS, radiation

The titanium nitride–aluminum oxide–silicon nitride–silicon oxide–silicon devices with a high-k aluminum oxide as a charge-blocking layer (TANOS) could be candidates for nonvolatile total ionization dose (TID) radiation sensors. Gamma radiation induces a significant decrease in the threshold voltage VT of TANOS and the radiation-induced VT decrease of TANOS is nearly 1.5 times that on a standard titanium nitride–silicon oxide–silicon nitride–silicon oxide–silicon (TONOS) device after 10 Mrad TID gamma irradiation. The change in VT of TANOS after gamma irradiation also has a strong correlation to the TID up to 10 Mrad gamma irradiation. The VT retention characteristics of TANOS devices can be improved before gamma irradiation and after 10 Mrad gamma irradiation. Moreover, the VT retention characteristics of TANOS devices can be markedly improved and are nearly 10% better than those of standard TONOS devices after 10 Mrad gamma irradiation. Therefore, the TANOS device in this study has demonstrated the possibility of its use for high response and good TID data retention for nonvolatile TID radiation sensing.

Corresponding author: Wen-Ching Hsieh


Cite this article
Wen-Ching Hsieh, Fuh-Cheng Jong, Hao-Tien Daniel Lee, and Shich-Chuan Wu, A Nonvolatile TID Radiation Sensor Using TANOS for High Response and Good Data Retention, Sens. Mater., Vol. 29, No. 7, 2017, p. 969-976.



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