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Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.

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Sensors and Materials, Volume 30, Number 4(1) (2018)
Copyright(C) MYU K.K.
pp. 733-756
S&M1535 Review Paper of Special Issue
https://doi.org/10.18494/SAM.2018.1857
Published: April 13, 2018

CMOS-MEMS Resonators and Oscillators : A Review [PDF]

Chao-Yu Chen, Ming-Huang Li, and Sheng-Shian Li

(Received December 18, 2017; Accepted January 23, 2018)

Keywords: CMOS-MEMS, resonator, oscillator, foundry-orientated process, monolithic integration, post-CMOS process

In this paper, we summarize research activities and technology progress in the field of current CMOS-MEMS resonators and oscillators for the portable sensor node and timing applications. By employing CMOS-based fabrication technologies, we can monolithically integrate MEMS devices and their associated application-specific integrated circuits (ASICs), thereby enhancing their overall performance as compared with their stand-alone counterparts. Owing to the diversity of post-CMOS processing techniques, in this review, we mainly focus on the devices achieved by so-called foundry-orientated CMOS-MEMS platforms. On the basis of how the mechanical structure is achieved, in the paper, we focus on two major strategies: (i) additive back-end-of-line (BEOL) compatible layers and (ii) machining of standard CMOS layers for device fabrication. Given their superior CMOS integration capability, the circuitry design concepts, testing results, and potential merits of state-of-the-art CMOS-MEMS oscillators are also presented.

Corresponding author: Sheng-Shian Li


Cite this article
Chao-Yu Chen, Ming-Huang Li, and Sheng-Shian Li, CMOS-MEMS Resonators and Oscillators : A Review, Sens. Mater., Vol. 30, No. 4, 2018, p. 733-756.



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