Supersteep retrograde (SSR) technology can improve the short-channel effects (SCEs) when device size is reduced. Additionally, it can reduce the leakage current of a device. We investigated the optimal process conditions for SSR technology. We determined whether the electromagnetic parameters of N-type and P-type fin field-effect transistors (FinFETs) can be improved using SSR technology through technology computer-aided design (TCAD) simulation. After the simulation, the transfer characteristic curve (ID–VG), Ion, Ioff, drain-induced barrier lowering (DIBL), subthreshold swing (SS), and mobility parameters were employed to determine the advantages and disadvantages of using SSR technology for a FinFET. The results revealed that when SSR technology is used for a FinFET, superior characteristics are observed even when the width and length of the FinFET are reduced. The SSR simulation results reveal that, as the doping concentration in SSR technology increases, the electrical properties of the device improve.