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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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English 日本語
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MYU K.K.
Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 31, Number 3(1) (2019)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 743-749
S&M1810 Research Paper of Special Issue https://doi.org/10.18494/SAM.2019.2119 Published: March 8, 2019 Annealing Cycle Dependence of Thermal Conductivity for Si-Ge-Au Thin Film Analyzed by Thermal Microscopy [PDF] Tsuyoshi Nishi, Tomohiro Mayama, Hiromichi Ohta, and Yoichi Okamoto (Received August 24, 2018; Accepted November 9, 2018) Keywords: thermal effusivity, Si–Ge–Au, amorphous, thin film, thermal microscope, thermal conductivity
The thermal effusivity of a Si–Ge–Au thin film was measured using a thermal microscope. A thin-film sample with sixty-seven artificial intervals each comprising Si (2.0 nm)/Au-doped Ge (2.5 nm) was prepared and annealed more than 20 times. The dependence of the thermal conductivity of the film on the number of annealing cycles was determined using the obtained experimental thermal effusivity data, bulk density, and specific heat capacity. The film thickness (~300 nm) was greater than the thermal diffusion length of the samples. The thermal conductivity of the Si–Ge–Au thin film was satisfactory considering the number of annealing cycles. Thus, we elucidated the annealing effect of thermal conductivity for the Si–Ge–Au thin film.
Corresponding author: Tsuyoshi Nishi, Tomohiro Mayama  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Tsuyoshi Nishi, Tomohiro Mayama, Hiromichi Ohta, and Yoichi Okamoto, Annealing Cycle Dependence of Thermal Conductivity for Si-Ge-Au Thin Film Analyzed by Thermal Microscopy, Sens. Mater., Vol. 31, No. 3, 2019, p. 743-749. |
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