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Vol. 34, No. 8(3), S&M3042

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Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.

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Sensors and Materials, Volume 31, Number 5(1) (2019)
Copyright(C) MYU K.K.
pp. 1375-1386
S&M1864 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2019.2258
Published: May 16, 2019

Secure Circuit with Low-power On-chip Temperature Sensor for Detection of Temperature Fault Injection Attacks [PDF]

Hyungseup Kim, Byeoncheol Lee, Jaesung Kim, Kwonsang Han, Hyoungho Ko, Dong Kyue Kim, Byong-Deok Choi, and Ji-Hoon Kim

(Received April 13, 2018; Accepted March 13, 2019)

Keywords: secure circuit, hardware security, physical attack protection, fault injection attacks, temperature fault injection attacks

In this paper, we present a secure circuit with a low-power on-chip temperature sensor for the detection of temperature fault injection attacks. Such attacks stress an electronic circuit by heating it beyond the allowed operation temperature range, inducing random modifications of the data in the memory cell or limiting the function of the target device. The objective of the proposed secure circuit with an on-chip temperature sensor is to detect temperature-based fault injection attacks and protect the secure contents of the target device. The proposed secure circuit detects and allows the shutdown of the protected circuit when the temperature is below −10 ℃ or above 80 ℃. The protected circuit operates normally in the operation temperature range from −10 to 80 ℃ and can be shut down by the control block of the secure circuit outside of this operation temperature range. The proposed secure circuit has a simple structure and a small active area, and consists of a low-power temperature sensor, two comparators, and an XOR gate. It is fabricated using a standard 0.18 μm complementary metal-oxide-semiconductor (CMOS) process with a small active area of 0.04 mm2 and consuming 19.72 μW with a 1.8 V power supply.

Corresponding author: Ji-Hoon Kim


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Cite this article
Hyungseup Kim, Byeoncheol Lee, Jaesung Kim, Kwonsang Han, Hyoungho Ko, Dong Kyue Kim, Byong-Deok Choi, and Ji-Hoon Kim, Secure Circuit with Low-power On-chip Temperature Sensor for Detection of Temperature Fault Injection Attacks, Sens. Mater., Vol. 31, No. 5, 2019, p. 1375-1386.



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