pp. 2321-2328
S&M2261 Research Paper of Special Issue https://doi.org/10.18494/SAM.2020.2867 Published: July 10, 2020 Photoelectric Properties of SnO2/Ti/GZO Multilayer Thin Film after Annealing at Different Temperatures for Photosensor Applications [PDF] Chi-Fan Liu, Tao-Hsing Chen, and Yu-Sheng Huang (Received February 11, 2020; Accepted May 25, 2020) Keywords: SnO2, multilayer film, annealing temperature, electrical, transmittance
In this study, RF magnetron sputtering is employed to deposit a SnO2/Ti/GZO (TTG) transparent conductive film on a Corning glass substrate to investigate the effect of the annealing temperature on the electrical properties, transmittance characteristics, surface properties, and structural properties of a TTG conductive film. The results show that upon annealing at 300 ℃, the minimum resistance was achieved by the TTG multilayer film, i.e., 1.57 × 10−2 Ω∙cm. Regarding the transmittance characteristics of all multilayer films, it is evident that the higher the annealing temperature, the higher the mean transmittance, but above an annealing temperature of 300 ℃, the transmittance decreases slightly.
Corresponding author: Tao-Hsing ChenThis work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Chi-Fan Liu, Tao-Hsing Chen, and Yu-Sheng Huang, Photoelectric Properties of SnO2/Ti/GZO Multilayer Thin Film after Annealing at Different Temperatures for Photosensor Applications, Sens. Mater., Vol. 32, No. 7, 2020, p. 2321-2328. |